Gain measurement of 60 GHz CMOS on-chip dipole antenna by proton irradiation

In this paper, a 60 GHz CMOS on-chip dipole antenna with loss-reduced silicon substrate, which had been proposed and simulated by the authors, was measured and gain improvement of approximately 9 dB was obtained. In the antenna, rectangular region with 500 μm × 1000 μm around the dipole is irradiated by proton and conductivity is reduced from 10 S/m (10 Ω cm) to 0.1 S/m (1 kΩ cm). Antenna gain of -4 dBi could be achieved.