Single event transient in bulk MOSFETs: Original modelling for SPICE application

Single Event Transient (SET) is an important issue concerning reliability of MOS devices. Lots of experimental and simulation works have already been done [1- 4] but few of them are dealing with compact modelling. In this paper, we develop a physical model which describes the transient current pulse which appears at the electrodes of a Bulk MOSFET after the striking of an ionizing particle in the device. The validation of the model has been done by some confrontations with TCAD simulations. It turned out that the developed model has an innovative aspect for implementation into SPICE simulator.