Hot carrier injection effect and low frequency noise in NMOSFET processed in 65nm technology

Low frequency noise behavior and hot carrier injection (HCI) effect in 65nm NMOSFET was investigated in this paper. The number of oxide traps and interface traps induced by HCI effect and traps density near silicon oxide interface before and after HCI test were calculated by low frequency noise technology. It was observed that the change during HCI test was determined by low frequency noise technology.