Impact of interface-traps on TDDB lifetime by distorting the Weibull slope

In this study, impact of traps located at SiO
₂
/Si interface on the time-dependent dielectric breakdown (TDDB) lifetime is investigated by modeling the Weibull distribution in high-k (HK) dielectric stacks. The results show that the interface traps will cause the distortion of Weibull slope of TDDB lifetime, decreasing the growing rate of the probability of breakdown after a long time.