Fabrication of large-area arrays of coaxial gated ZnO nanowire field emitters for vacuum microelectronics applications

The feasibility of preparation of nanowire on glass favors the realization of large area devices, which makes nanowire field emitter arrays (FEAs) good candidate for large-area vacuum microelectronics applications. In this study, a coaxial gated ZnO nanowire FEAs was fabricated. Effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated.