A unified analytical reliability model of NBTI and HCD for undoped double gate PMOS

This paper presents a simple analytical reliability model for potential and threshold voltage when negative bias temperature instability (NBTI) and hot carrier degradation (HCD) are included in double gate (DG) PMOS. The work is based on solving 2D Poisson equation for undoped DG PMOS. The effect of both reliability concerns on drain induced barrier lowering (DIBL) and threshold voltage roll-off is investigated. NBTI showed higher threshold voltage shift than HCD. On the other side HCD revealed 2×higher DIBL values than NBTI, and may reach three times roll off voltage values higher than NBTI, at high drain voltages.