Simulation and optimization of X-band microstrip filters based on high-resistance silicon wafer with BCB dielectric and new shielding TSV structure

X-band microstrip filters (f
0
=8.6GHz, FBW=9%) based on the half wavelength microstrip resonator on the high-resistance silicon wafer with new TSV shielding structure were presented. Furthermore, low permittivity and low dissipation factor benzocyclobutene (BCB) was used as dielectric to reduce filter loss. Considering the transmission loss of microstrip, the influence of the resonator order, filter structure, dielectric thickness and structure parameters of the TSV with shielding structure were simulated and optimized respectively with electromagnetic simulation software HFSS. Simulation results show that the X-band filters with optimized parameters have lower insertion loss ranged from 1 dB to 2.5 dB, higher return loss ranged from 13 dB to 19dB. The insertion loss only increases by 0.2dB if integrated with optimized shielding TSV.