SiC wafer bonding using surface activation method for power device

This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with a Si-containing Ar ion beam could be ~30% stronger and almost completely recrystallized by RTA without oxidation. The advantages of modified SAB with a Si-containing Ar ion beam are attributed to the assumed in-situ Si-compensation during surface activation.