Characterization of TSV transition properties using TRL method

The through silicon via (TSV) technology provides a promising way to realize RF micro system. In this paper, a coaxial vertical TSV transition is presented with one TSV in center as signal conductor and six TSVs arranged in circle as ground path. The front-to-front test structure consists of two coaxial TSV transitions connected in a cascade way. As a result, the properties of the TSV transition is buried in the direct measurement result. TRL method is used to de-embed the extra transmission lines and extract the scatter parameter of a single TSV transition. The de-embedded result shows that the insert loss of the single TSV transition is better than 0.5dB and the return loss is better than 20dB up to 30GHz. The characterization of a single TSV transition is meaningful for accurate modeling research.