Evolutionary process of nanoscale FinFET channel in hydrogen thermal treatment technology

The evolutionary process of nanoscale FinFET channel was investigated under hydrogen thermal treatment using kinetic Monte Carlo (KMC) simulation. We adopt appropriate activation energy to analyze the influence of hydrogen treatment temperatures and time on fin structure. Line edge roughness (LER) of silicon fin structure is effectively reduced in present KMC model. Our results indicate that optimized fin structure can be obtained by precisely adjusting migration of surface silicon atoms at high temperatures, which play a crucial role in the application of three-dimensional devices.