Monolayer MoS2 for nonvolatile memory applications

In this work, two-dimensional MoS
₂
has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS
₂
-NVMs with blocking oxide layer of various thicknesses have been further investigated. The MoS
₂
-NVMs with 9-nm-thck blocking oxide layer exhibits a large hysteresis in the C-V sweeping and the fastest speed in programming characteristics. In addition, both electrons and holes can store in MoS2 monolayer, contributing to a promising application in future high-performance NVMs.