Characterization of a 1-pin stress ESD testing method for the analysis of nanosecond-range charging effects

Modeling of a 1-terminal ESD test setup is described. During the device stress a fast current pulse is forced only through a single pin of a semiconductor device. The model can be used to calculate voltage and current waveforms during the charging and discharging phase of an ESD event which takes place within a few nanoseconds. Charging and discharging of a device depends on the design and dimensions. The model is obtained from measurement data in frequency domain. A serial circuit is built representing the stress setup used in time domain including a simple model of a device.