Design of boost power factor corrector with GaN HEMT devices

The continuous conduction mode (CCM) boost power factor corrector (PFC) has the advantages of low current ripple and low electromagnetic interference. However, due to its high output voltage and CCM operation, the switching frequency will be limited by the reverse recovery loss. In order to achieve higher power density, the switching frequency must be increased. Therefore, the Gallium-Nitride high electron mobility transistor (GaN HEMT) is adopted to replace the conventional Si-based components. As the switching frequency increased, the design of energy storage components of the PFC need to be developed. The design criteria for the energy storage components upon the practical application are developed in this paper. The simulation and hardware implement results are presented to verify the performance of the prototype circuit. Also, some comparisons of experimental results between using GaN HEMT and conventional Silicon-based Metal-Oxide-Semiconductor Field-Effect Transistor (Si-based MOSFET) will be discussed.