Optimized Dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ With p-Type Buried Layer Bridge in 700-V Triple RESURF nLDMOS

The dynamic on-resistance (R
_ON
) problem widely exists in reduced surface field (RESURF) lateral DMOS (LDMOS), which leads to large conduction losses in the switching application. Analysing a 700-V triple RESURF LDMOS, the mechanism of this phenomenon is researched by the analytical model and the experimental results. Building some bridges of the p-type buried layer (Pbury), the charges of the Pbury-N-well capacitance are discharged. The V
_ds
can be reduced to the static value quickly without the tail. Therefore, the dynamic RON is significantly reduced. Meanwhile, the breakdown voltage is not affected by the Pbury bridge.