Low-frequency noise in quasi-1D TaSe3 van der Waals nanowires

We review results of our studies of the low-frequency electronic noise in quasi-1D TaSe
₃
nanowires of. The semi-metallic TaSe
₃
is a quasi-1D van der Waals material with an exceptionally high breakdown current density. Our noise studies showed that TaSe
₃
nanowires have lower levels of the normalized noise spectral density, S
_I
/I
²
, compared to carbon nanotubes and graphene. The temperature-dependent measurements revealed that the low-frequency 1/f noise becomes the 1/f
²
-type as temperature increases to ~400 K, suggesting the onset of electromigration. Using the Dutta-Horn random fluctuation model of the electronic noise, we determined that the noise activation energy for quasi-1D TaSe
₃
nanowires is approximately E
_P
≈1.0 eV. From the empirical noise model for interconnects, the extracted activation energy, related to electromigration, is E
_A
=0.88 eV, consistent with that for Cu and Al interconnects. Our results suggest that TaSe
₃
nanowires and similar systems have potential for ultimately downscaled local interconnect applications.