Intentional Two-Dimensional Non-Uniform Dose Implant with High Dynamic Dose Range

Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose range and (2) High dynamic dose range intentional non-uniform implant with relatively moderate dose accuracy. Sumitomo Heavy Industries Ion Technology (SMIT) has developed two-dimensional intentional non-uniform doseimplant methods for both demands. A method to carry out a high-accuracy intentional 2D non-uniform implant (MIND 2.0) will be presented at this conference. In this paper, our method to carry out a high-dynamic-range 2D non-uniform dose implant will be reported. A test implant was planned and carried out for an intentional doughnut-shape dose pattern by using the MC3-II/GP ion implanter. While the implant dose in the outmost region is neglected, we could obtain in the inner region about ten times smaller dose than in middle region in a wafer.