High & Low Dose USJ Implantation into Ge-Epi on Si Wafers: Dopant Activation, Damage Recovery and Mobility Effects

High dose (5E15/cm
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) and low dose (5E13/cm
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) Ultra-Shallow-Junction (<;10nm) implantation into 100-200nm Ge-epi on Si wafers with 308nm laser sub-melt to melt annealing for dopant activation, damage recovery and mobility effects was investigated. Half wafer Ge-PAI was used for additional amorphization. Ge-epi implant damage recovery annealing shows a TW reverse trend from that typical in Si with implant damage recovery at energy density above 1.2J/cm
²
. Ge electron mobility for high dose P and As implant was 25- 50cm
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/Vs and low dose P or low dopant activation P mobility was >200cm
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/Vs while high dose B hole mobility was 44cm
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/Vs.