Fracture in Epitaxial InP on Si for InGaAs on Insulator Fabrication via Smart Cut™

This paper reports on our recent developments to obtain InGaAs-OI substrates via Smart CutTM. A focus is made on the fracture step in the InP buffer layer of the InGaAs/InP/Si epitaxial donor stack. We show that ion implantation temperature has a strong impact on the hydrogen profile and the nature of hydrogenated complexes formed and hence on the fracture mechanism. A favorable implantation temperature range is found between [0°C and 100°C]. Finally, by combining the implantation/fracture process identified with appropriate bonding and finishing process, a high quality 300 mm InGaAs-OI wafer with InGaAs top layer of a few tens of nanometers is obtained.