H-bridge building block with SiC power MOSFETs for pulsed power applications

This paper presents a H-bridge building block with 1700V SiC MOSFET for a pulsed power application to achieve both high voltage, high current and high switching frequency capability. Both power module level and system level stray inductance is minimized to better utilize the SiC high switching speed capability. Meanwhile, since the large pulsed energy is required to drive the pulsed load, voltage sensing for active DC link voltage compensation is proposed and designed.