Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors

AgTe/TiN/TiO
₂
/TiN threshold switching (TS) device was monolithically integrated with silicon MOSFET to demonstrate steep subthreshold slope field-effect transistors. The TS device with AgTe top electrode showed the high on-current, since the Te allows an extraction of the Ag out of the filament. The TiN liner was also inserted at the AgTe/TiO
₂
interface to prevent in-diffusion of Ag into the TiO
₂
layer during back-end-of-line process. Finally, the transistor with TS device has a sub-5-mV/dec subthreshold slope (SS) and a high on/off current ratio (I
_on
/I
_off
) of >10
⁸
with a low drain voltage (0.5 V) even after the 400°C annealing process.