Selective MOCVD growth of strained (In)GaAs quantum dot active region laser diode on GaAs substrates employing diblock copolymer lithography

Summary form only given. Semiconductor laser diodes (LD) employing quantum dot (QD) active region have attracted attention due to the theoretical predictions: low threshold current density and low temperature sensitivity originated from the delta-function-like density of states and small active volume. However, while high performance devices have been demonstrated, the realization of all the predicted advantages has remained challenging. Here, the properties of LD employing a dense array of the wetting layer-free, compressively-strained single layer In
_0.35
Ga
_0.65
As QDs as the active region on a nominally singular (001) GaAs substrate grown by MOCVD is reported.