Backside-TSV process development and integration for 2∼3um small size TSV

In this paper, we show the process and integration results of small TSVs integrated by 300mm 3DIC BTSV process. The TSV size is from 2um to 3um (in diameter) with aspect ratio of 10. The achievements of this work are: 1) successful demonstration of 20um thin wafer process by ITRI's 300mm wafer thinning process; 2) 2~3um TSV patterning and etching performed by backside TSV process; 3) Combination of the contact aligner and scanner alignment mark systems to explore the backside process capability of scanner for the first time; 4) Completion of the liner deposition, bottom oxide break and TSV filling of 3um TSV to realize the small size TSV integration; 5) Verification of 3um-diameter and 30um-depth BTSV by daisy chain electrical measurement with the yield of 75% in 1360ea TSV. The result shows the integration feasibility of BTSV with small size TSV for high area penalty concern products.