High-power heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond

We demonstrate InP-based high power modified uni-traveling carrier photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. These photodiodes reach 20 nA dark current at -5 V bias voltage. A 50 μm long device exhibits an internal responsivity of 1.07 A/W. The bandwidths of the devices with 14×25 μm
²
, 14×50 μm
²
, 14×100 μm
²
and 14×150 μm
²
area are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of the 14×100 μm
²
photodiode are 15.3 dBm at 10 GHz and 19.8 dBm at 1 GHz. The maximum DC dissipated power at 1 GHz is 0.8 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated into a SOD architecture.