The insertion loss of coplanar waveguide structure on PMNT thin films

This paper presents a continuation of an investigation into the behavior of lead magnesium niobate-lead titanate, Pb(Mg
0.33
Nb
0.67
)
0.65
Ti
0.35
O
3
) (PMNT) thin film at high frequency through electromagnetic (EM) simulation. The purpose of this paper is to improve the electrical characteristics. The electrical characteristics were analyzed on CPW built on PMNT thin films. In this study, we focus on the insertion loss (IL), one of the most important parameters of electrical characterization. The IL is the value of S
21
, the bigger of the S
21
, the better of the performance. The effect of the parameters on IL is invested in three aspects, including whether there is a layer of Au on top Pt; the varying of the dielectric constant (k) of PMNT, which is increased because of the improvement of fabrication process; the varying of substrate, which including high resistance Si, low resistance Si and Silicon on Insulator (SOI). The results show that the IL of the case with a layer of Au is bigger than without; the higher of the dielectric constant of ferroelectric material, the bigger of the IL in a specific range; the IL of the structure with SOI as substrate is bigger than others. According to the results of the final analysis, a structure with bigger IL will be found and the accuracy of characterization will be improved. The achievement of this study will be extended from the structure to other common structures and as a guidance for other researches in some aspects. At the same time, these results show the viability of using PMNT as a new ferroelectric material for monolithic microwave integrated circuits.