Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 10
¹⁴
to 6.52 × 10
¹³
atoms/cc, 1.2 × 10
²⁰
to 3.54 × 10
¹⁹
atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, Jo. and solar cell output characteristics.