High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Full transparent high-performance tin-zinc-oxide thin-film transistors (TZO TFTs) had been successfully fabricated on flexible plastic substrate by radio frequency (RF) sputtering. Excellent properties of TZO TFT with L
_G
= 10 μm gate length were realized, namely high saturation mobility (μ
_s
) of 175 cm
²
/V · s, high linear mobility (μl) of 127 cm
²
/V · s, a suitable threshold voltage (V
_th
) of 1.81 V, a steep subthreshold swing (SS) of 220 mV/decade, an ON/OFF current ratio (I
_ON
/IO
_FF
) of ~1 × 10
⁸
, and good transmittance of 91.9%, which compare favorably to those made on glass substrates. Mechanical stability of flexible TZO TFTs was investigated by bending tests. The flexible TZO TFTs exhibited good electrical performance, good uniformity, and good flexibility. Thereby, we demonstrated the feasibility of high-performance TZO TFTs for flexible display applications.