GaMnAs for Mid-Wave Infrared Photodetection

The use of GaMnAs as the emitter of an internal-photoemission (IPE) photodetector is studied. As a result of significantly high concentration of holes, GaMnAs-based IPE detector resembles a Schottky-barrier detector, which has the higher absorption and thus enhanced spectral response by comparing with the previously reported p-type GaAs/AlGaAs detectors. A GaMnAs/AlGaAs detector is expected to fully cover the 3-5-μm range of detection. The theoretical value of the responsibility is 0.0133 A/W at 3.5 μm.