Investigation of short channel effects in Bulk MOSFET and SOI FinFET at 20nm node technology

The need to control the short channel effects in transistor that occurs in nanometer regime has caused the invention of multi gate transistors over planar bulk transistors in order to improve the performance. In this research paper the 3D model of SOI FinFET and Bulk MOSFET at 20nm node technology is designed and their transfer characteristics, drain characteristics and short channel effects are reported. The OFF state leakage current, DIBL, and threshold voltage of SOI FinFET and bulk MOSFET has been calculated. The simulation is performed using TCAD simulator. The simulation results has shown that the OFF state leakage current is less in FinFET as compared to bulk MOSFET and the Ion in SOI FinFET is higher than that of bulk MOSFET. The DIBL of bulk MOSFET is found to be 2.57 times more than that of SOI FINFET, so SOI FinFET has shown reduction in short channel effects as compared to bulk MOSFET at 20nm gate length. GIDL is also examined in both devices. The drain current of SOI FinFET at V
_gs
= 0.1V is observed higher than that of bulk MOSFET.