GaAlSb based VCSEL and edge emitting lasers

Optoelectronic emitters based on the GaAlInSb system have received a rapidly increasing attention during the last few years. This is mainly due to two reasons. (i) This material system allows one to realize lasers which cover the wavelength range from about 1.3 /spl mu/m to 3 /spl mu/m and beyond, i.e. the relevant wavelength ranges for telecommunication. (ii) The large refractive index difference of GaSb and AlSb of about 0.7 allows to realize monolithic VCSELs in the 1.3 /spl mu/m wavelength range and above. Due to the much smaller refractive index variation InGaAsP lasers which are commonly used at 1.3 and 1.5 /spl mu/m much less favourable for long wavelength vertical emitters. We present GaAlSb VCSEL lasers.