The experimental results of fast switching system for millimeter wave transmission using photo-excited semiconductor

Photo-excited semiconductor switching system for fast control of millimeter wave is developed and tested with an oversized corrugated horn D/ λ > 10) and quasi-optical mirror setup. Semi-insulating GaAs (100) having direct band-gap shows fast switch ON-OFF (< 100 ns) whereas semi-insulating Si (100) having indirect band-gap shows fast switch ON (< 100 ns) and slow switch OFF (< 1 ms) for the millimeter-wave regime.