Analysis of the internal quantum efficiency of β-FeSi2 light-emitting diode

This work is to calculate the dc characteristics and investigate the internal quantum efficiencies of β-FeSi
₂
-based DH LED and AlGaAs/GaAs DH LED by analytical methods. The internal quantum efficiencies are decreased as the applied forward-bias voltages are increased. When the intrinsic layer thicknesses and doping concentrations are increased, the internal quantum efficiencies will also increase. At high forward-bias voltages, the internal efficiencies of AlGaAs/GaAs DH LED are superior than that of β-FeSi
₂
DH LED.