A 2 to 92 GHz distributed amplifier using 70-nm InP HEMTs

This paper presents a broad band distributed amplifier (DA). The amplifying cell utilizes the cascode structure with transistor dimension mismatch. With different sizes of the transistor used, the input and output capacitance will be more balanced and hence, better impedance matching is achieved for the designed DA. 70 nm InP HEMTs are used to fabricate the proposed design, the total chip area occupied is 2.9mm×0.85mm including the bonding pads. The DA achieves a band width of 2 to 82 GHz, with the average gain of 21 dB. The total power consumption of the DA is 300 mW with a power supply voltage of 2 V.