IGBT and MOSFET: A comparative study of power electronics inverter topology in distributed generation

The Role of DG in smart grid becomes a significant one in the present energy sector scenario. Either power electronic convertor or AC rotating machine will act as an interfacing media to connect DG with main grid. Higher degree of flexibility and sound technically feasible option will be provided when converter interfaced DG is utilized. Among the various power electronic switching devices, higher voltage, low-switching frequency insulated gate bipolar transistor (IGBT) inverter and a lower voltage, high-switching frequency metal oxide semiconductor field effect transistor (MOSFET) inverter have gained massive attention in the research forum. Hence this paper mainly observes the average approach of converter interfaced DG with IGBT/MOSFET as switching devices with 180/120 degree supplying resistive(R) and serious RLC load. Voltage, current, real power, reactive power and total harmonic distortions are some of the important significant parameters taken for study. Simulations are carried out with MATLAB/Simulink platform.