MBE-grown Mn-doped SnSe2 2D films on GaAs (111)B substrates

Intensive research is currently being aimed at understanding both the growth and the physical properties of a wide range of two-dimensional (2D) materials [1], since this class of materials is expected to lead to entirely new types of devices on the nanoscale. Additionally, the introduction of magnetic dopants into a 2D lattice can bring out new functionalities, providing new opportunities for spintronic applications. In this work we explore this area by introducing Mn ions into the 2D lattice of SnSe
2
. The growth of Mn-doped SnSe
2
films was carried out by molecular beam epitaxy (MBE) on GaAs (111)B substrates by varying the flux of Mn during the growth. Rigorous characterization of the physical properties of this material was carried out by a wide range of complementary studies, including RHEED, XRD, electric-transport and Raman spectroscopy.