MBE growth and optical investigation of GaSb/AlSb VCSEL structures for the 1.5 /spl mu/m range

We have investigated the growth of VCSELs based on the GaAlSb material system by solid source molecular beam epitaxy. Laser structures with different numbers of mirror layers have been analyzed by reflectivity experiments. We observe a systematic narrowing of the cavity resonance with increasing number of mirror layers down to a FWHM of 0.9 meV (50 K). The dependence of the FWHM of the cavity resonance on the number of mirror layers and the temperature dependence of the resonance energy are found to be in good agreement with results of transfer matrix theory calculations.