Charging effects on SOI based NEMS by the example of a nanoscale Thermal-Time-of-Flight (TToF) sensor

By the use of novel techniques like Silicon-on-insulator (SOI) wafer and electron beam lithography (EBL), the development of new types of NEMS-sensors, like a nanoscale Thermal-Time-of-Flight (TToF) sensor, are possible. While scaling the dimensions to a nanoscale level, new side effects will become non neglectable. Within the research and development of a nanoscale TToF sensor such a side effect has been discovered. It shows that the charging of the buried oxide, while applying a voltage to the nano diodes, has an important impact on the characteristics of this kind of sensor. The significance of this effect and its impact on this type of sensor and similar sensors will be shown within this paper.