High temperature SiC-sensors

The technological flow similarities between two devices on silicon carbide, a Schottky diode and a MOS capacitor, are presented. The devices are used as temperature and hydrogen sensors, respectively. Both devices are characterized up to high temperatures, 400°C for Schottky diode and 300°C for MOS capacitor. Performed measurements demonstrate good forward voltage linearity with temperature (Schottky diode) and the absence of mobile oxide charges (MOS capacitor).