Growth process for high performance of InGaAs MOSFETs

To obtain high performance in nMOSFETs, the introduction of high-mobility channel material such as InGaAs is a promising approach. However, the required source doping concentration for a high driving current cannot be obtained by ion implantation in InGaAs. One method of achieving a heavily doped source in III–V semiconductor MOSFETs is by growing an epitaxial source/drain structure.
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For realizing such a source, we used a regrown InGaAs source
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and an InP source.
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The regrown sources are also important for high current drivability of 3D or multi-gate devices. The other advantage of regrowth in multi-gate devices is a smooth surface for high electron mobility.
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In this report, we describe the growth process for high-performance InGaAs MOSFETs.