Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

100 nm gate length InAlAs/InGaAs high electron mobility transistors (HEMTs) have been transferred onto polyimide flexible substrate. In our previous paper, high frequency capability was demonstrated despite the presence of kink effect. Cutoff frequencies f
_T
and f
_max
were respectively 120GHz and 280GHz and similar to value obtained on rigid substrate. In this work, we have designed a specific buffer layer in order to reduce the kink effect. Moreover the effect of bendabilty on RFperformance is explored on flexible devices.