High performance self-aligned top-gate amorphous indium zinc oxide thin-film transistors

We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of ~116 cm
²
V
^-1
s
^-1
, SS of ~190 mV dec
^-1
, and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.