MOCVD growth of carbon-doped InGaAs layers using ethyl-base metal organic materials

Ethyl-base metal organic materials and pulse-doping technique were employed in C-doped p-InGaAs epitaxial growth. By using triethylindium, a linear relationship between In supply ratio and In content was observed with less growth-temperature variation, comparing with trimethylindium. Pulse-doping for C with CBr
₄
was significantly suppressed metal organic materials consumption. As a result of that, good controllability of C doping by CBr
₄
flow and a large carrier density of 1.4 × 10
¹⁹
cm
^-3
were achieved.