Keynote Address: Device reliability physics: Past, present, and future

Summary form only given. The importance of CMOS reliability grows as the world becomes more interconnected and instrumented. At the same time, the understanding of CMOS reliability is continuously challenged and transformed by the rapid evolution of technology. The recent introduction of new materials and structures (high-k, metal-gates, and FinFETs) challenges our understanding and ability to rapidly qualify new technologies. This talk will offer a selective retrospective of reliability physics in old-fashioned SiO
2
-based MOSFETs with poly-Si gates, and explore the extent to which the old models remain valid in present-day and future technologies.