100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies

This paper reports the transfer of 100nm-gate length high electron mobility transistors onto plastic flexible substrate. The layers of transistors are grown epitaxially on indium phosphide (InP) bulk substrate. The transfer of these transistors onto polyimide substrate is realized by an adhesive bonding technique. High cut-off frequencies f
_T
=120GHz, f
_max
=280GHz are demonstrated. These microwave performances are comparable with results obtained on 100nm-gate HEMT on rigid substrate (HEMT-RS), which provides a strong possibility to integrate high-frequency communication systems and high-speed processing applications into the flexible device in the near future.