Cost-effective printed memristor fabrication and analysis

Fabrication of the printed memristors and their memristive behavior have been presented for different metal-insulator-metal (MIM) structures. The printing techniques studied for the current work includes electrohydrodynamic printing (EHDP) and roll-to-plate. The materials used for the electrode deposition are silver (Ag) and indium titanium oxide (ITO) while zirconium oxide (ZrO
2
) and graphene oxide (GO) have been used for the sandwich layer between two electrodes on a polyimide (PI) substrate. Electrically stable bipolar resistive switching behavior of all the MIM structures with significant Off/On ratio has been observed. The analysis regarding device dimensions and its current voltage (IV) behavior with respect to the employed printed electronic techniques confirms their feasibility for the cost-effective memristive device fabrication.