Modeling and implementation of oxide memristors for neuromorphic applications

We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WO
x
) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.