Memristor crossbar arrays with junction areas towards sub-10 × 10 nm2

We used diluted hydrofluoric acid to shrink the feature size of a silicon dioxide nanoimprint mold to sub-10 nm regime. Using this mold, we have fabricated memristor crossbar arrays using nanoimprint lithography. We demonstrated that memristor devices with small junction areas exhibited bipolar non-volatile switching behavior with high ON/OFF ratio and low operational current.