Realization of fully tunable FinFET double quantum dots with close proximity plunger gates

This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.