Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs

In this paper, we present an analytical modeling approach to predict the tunneling and thermionic current of Schottky barrier UTB MOSFETs with dopant-segregated source and drain junctions. Essential 2D effects on the currents are included in the model which are combined with diffusion effects in the channel region. The model is compared with measurement data for a dopant segregated fully-depleted Schottky barrier MOSFET and is in a good agreement.