K-Band Passive Mixer based on Complementary Transistors in 130 nm CMOS Technology

A passive down-conversion mixer for Kband application is designed and fabricated in a 130 nm CMOS process. Complementary switch transistors are implemented to reduce the conversion loss and LO power requirement. After de-embedding the IF output buffer, the voltage conversion loss of the mixer is 2˜5 dB at 21˜26 GHz with the LO power of 0 dBm. The input 1 dB compression point is -3 dBm. The measurement results are compared with state-of-the-art realizations in this frequency band.