Advancement of MOSFET with the application of hafnium

In this paper, we have discussed the use of hafnium and its oxide in the designing of a MOSFET in place of silicon and its oxide. The performance of HfO
₂
for the MOSFET such as oxide capacitance per unit area, threshold voltage, mobility of carriers, drain current, body biasing effect, resistance, capacitance, figure of merit, CMOS switching characteristics with the rise time, fall time, maximum signal frequency, propagation delay and power dissipation have been discussed.